epitaxial growth
外延生长：一种材料生长技术
常用释义
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美式发音
基本释义
- 外延生长：一种材料生长技术，通过在晶体表面上沉积原子或分子来制造单晶薄膜。
例句
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1·BST thin films sol gel technique epitaxial growth electrical properties.标签薄膜溶胶-凝胶工艺外延生长电性能。
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2·Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph.从外延形貌照片中观察到了外延生长台及生长螺线。
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3·A two-step epitaxial growth technique from low pressure to atmospheric pressure has been presented.本文提出了低-常压两步外延生长技术。
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4·Experiments show that the epitaxial growth structure could be used in the preparation of APD devices.测试结果表明，利用所采用的外延生长结构制备APD器件，具有可行性。
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5·Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.现代先进的外延技术使应变层锗硅材料的应用成为可能。
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6·Based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.本文根据实际测量结果，一叙述了半导体衬底制片质量对外延生长的影响。
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7·The density and contact effect of the film were improved by the introduction of a transitory high temperature treatment ahead of epitaxial growth.提出一种在生长温区前进行短暂熔融处理的工艺手段，提高了薄膜的致密性和浸润效果。
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8·From the time-dependence of reflectivity at different temperature the solid phase epitaxial (SPE) growth rate was calculated.从反射率随时间的变化曲线，计算出不同退火温度下的固相外延速率。
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9·The major aspects of the recent development in the growth, characterization and applications of the hetero epitaxial diamond films by chemical vapor deposition were reviewed.评论了国内外化学气相沉积的异质外延金刚石膜制备技术、性质表征以及应用和展望。
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10·Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。